IndiumV3, Main, Repository, bibRecord, 003835

Study of electrical properties of CIGS thin films prepared by multistage processes

Identifieur interne : 003835 ( Main/Repository ); précédent : 003834; suivant : 003836

Study of electrical properties of CIGS thin films prepared by multistage processes

Auteurs : RBID : Pascal:10-0164670

Descripteurs français

Pascal (Inist)
- Propriété électrique, Couche mince, Dispersion, Conductivité électrique, Réaction chimique, Précurseur, Effet Hall, Dépendance température, Porteur libre, Bande conduction, Effet température, Cellule solaire, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, CuIn1-xGaxSe2, 7350, 7361, 8460J.

English descriptors

KwdEn :
- Chemical reactions, Conduction bands, Copper selenides, Dispersions, Electrical conductivity, Electrical properties, Free carrier, Gallium selenides, Hall effect, Indium selenides, Precursor, Solar cells, Temperature dependence, Temperature effects, Thin films.

Abstract

In this work, the dispersion mechanisms affecting the electric transport in CuIn_1-xGa_xSe₂ (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn_1-xGa_xSe₂ films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 004770

Links to Exploration step

Pascal:10-0164670

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of electrical properties of CIGS thin films prepared by multistage processes</title>
<author><name sortKey="Mesa, F" uniqKey="Mesa F">F. Mesa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1>
<s2>Bogotá</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Colombie</country>
<wicri:noRegion>Bogotá</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Calderon, C" uniqKey="Calderon C">C. Calderon</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1>
<s2>Bogotá</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Colombie</country>
<wicri:noRegion>Bogotá</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gordillo, G" uniqKey="Gordillo G">G. Gordillo</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1>
<s2>Bogotá</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Colombie</country>
<wicri:noRegion>Bogotá</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0164670</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0164670 INIST</idno>
<idno type="RBID">Pascal:10-0164670</idno>
<idno type="wicri:Area/Main/Corpus">004770</idno>
<idno type="wicri:Area/Main/Repository">003835</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical reactions</term>
<term>Conduction bands</term>
<term>Copper selenides</term>
<term>Dispersions</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Free carrier</term>
<term>Gallium selenides</term>
<term>Hall effect</term>
<term>Indium selenides</term>
<term>Precursor</term>
<term>Solar cells</term>
<term>Temperature dependence</term>
<term>Temperature effects</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété électrique</term>
<term>Couche mince</term>
<term>Dispersion</term>
<term>Conductivité électrique</term>
<term>Réaction chimique</term>
<term>Précurseur</term>
<term>Effet Hall</term>
<term>Dépendance température</term>
<term>Porteur libre</term>
<term>Bande conduction</term>
<term>Effet température</term>
<term>Cellule solaire</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>CuIn1-xGaxSe2</term>
<term>7350</term>
<term>7361</term>
<term>8460J</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work, the dispersion mechanisms affecting the electric transport in CuIn<sub>1-x</sub>
Ga<sub>x</sub>
Se<sub>2</sub>
 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn<sub>1-x</sub>
Ga<sub>x</sub>
Se<sub>2</sub>
 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>518</s2>
</fA05>
<fA06><s2>7</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Study of electrical properties of CIGS thin films prepared by multistage processes</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Photovoltaics, Solar Energy Materials and Thin Films - IMRC 2008, Cancun, Mexico</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>MESA (F.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CALDERON (C.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GORDILLO (G.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>MATHEW (Xavier)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>SINGH (Vijay P.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1>
<s2>Bogotá</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Centro de Investigación en Energía, Universidad Nacional Autónoma de México</s1>
<s2>62580, Temixco, Morelos</s2>
<s3>MEX</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Department of Electrical and Computer Engineering, 453 F. Paul Anderson Tower, Center for Nanoscale Science and Engineering, 467 D F. Paul Anderson Tower, University of Kentucky</s1>
<s2>Lexington, KY 40506-0046</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>Mexican Materials Research Society  (Mexican-MRS)</s1>
<s3>MEX</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>1764-1766</s1>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000189339380010</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>10 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0164670</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this work, the dispersion mechanisms affecting the electric transport in CuIn<sub>1-x</sub>
Ga<sub>x</sub>
Se<sub>2</sub>
 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn<sub>1-x</sub>
Ga<sub>x</sub>
Se<sub>2</sub>
 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C50</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C61</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Dispersion</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Dispersions</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Réaction chimique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Chemical reactions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Précurseur</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Precursor</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Effet Hall</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Hall effect</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Porteur libre</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Free carrier</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Portador libre</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Bande conduction</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Conduction bands</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Effet température</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Temperature effects</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Cellule solaire</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Solar cells</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Séléniure de cuivre</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>CuIn1-xGaxSe2</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>109</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Photovoltaics Symposium</s1>
<s3>Cancun MEX</s3>
<s4>2008-08-17</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003835 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003835 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:10-0164670
   |texte=   Study of electrical properties of CIGS thin films prepared by multistage processes
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Study of electrical properties of CIGS thin films prepared by multistage processes

Study of electrical properties of CIGS thin films prepared by multistage processes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri